Lateral scaling of 0.25 μm InP/InGaAs SHBTs with InAs emitter cap

Electronics Letters

Volumn 40, Issue 18, 2004, Pages 1151-1153

  Hafez, W ^a   Feng, M ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SILICON WAFERS;

EMITTER RESISTANCE; EPITAXIAL STRUCTURE; LATTICE MATCHING; SINGLE HETEROJUNCTION BIPOLAR TRANSISTORS (SHBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 4544286145     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20045962     Document Type: Article

References (5)

1. T > 500 GHz', Electron. Lett., 2003, 39, pp. 1475-1476
2. Ida, M., Kurishima, K., Ishii, K., and Watanabe, N.: 'High-speed InP/InGaAs DHBTs with a thin pseudomorphic base'. Gallium Arsenide Integrated Circuit (GaAs IC) Sym. 2003. 25th Annual Technical Digest, San Diego, CA, USA
3. max = 375 GHz/210 GHz'. Int. Conf. Indium Phosphide and Related Materials, Santa Barbera, CA, USA, 2003
4. Hafez, W., Lai, J.W., and Feng, M.: 'Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA', IEEE Electron Device Lett., 2003, 24, pp. 427-429
5. T of 377 GHz', IEEE Electron Device Lett., 2003, 24, pp. 292-294