Patterned n+ implant into InP substrate for HBT subcollector

IEEE Transactions on Electron Devices

Volumn 51, Issue 10, 2004, Pages 1736-1739

  Chen, Mary Y ^a   Sokolich, Marko ^a   Chow, David H ^a   Bui, Steven ^a   Royter, Yakov ^a   Hitko, Donald ^a   Thomas III, Stephen ^a   Fields, Charles H ^a   Rajavel, Rajesh D ^a   Shi, Biqiang ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

SEMICONDUCTOR EPITAXIAL LAYERS; SUBCOLLECTOR;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 5444254545     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.835024     Document Type: Article

References (11)

1. M. Sokolich, M. Y. Chen, D. H. Chow, Y. Royter, S. Thomas III, C. H. Fields, D. A. Hitko, B. Shi, M. Montes, S. S. Bui, Y. K. Boegeman, A. Arthur, J. Duvall, R. Martinez, T. Hussain, R. D. Rajavel, J. C. Li, K. Elliott, and J. D. Thompson, "InP HBT integrated circuit technology with selectively implanted subcollector and regrown layers," in Proc. GaAs IC Symp., 2003, pp. 219-222.
2. J. P. Donnelly and C. E. Hurwitz, "Ion-implanted n- and p-type layers in InP," Appl. Phys. Lett., vol. 31, pp. 418-420, 1977.
3. W. Haussler, D. Romer, and M. Plihal, "Ion implantation into InP for optoelectronic devices," Siemens Res. Dev. Rep., vol. 17, pp. 177-183, 1988.
4. A. Dodabalapur, C. W. Farley, S. D. Lester, T. S. Kim, and B. G. Streetman, "Phosphorus-overpressure rapid thermal annealing of InP," J. Electron. Mater., vol. 16, no. 4, pp. 283-288, 1987.
5. D. E. Davis, W. D. Potter, and J. P. Lorenzo, "Implantation and PH3 ambient annealing of InP," J. Electrochem. Soc.: Solid-State Sci. Technol., pp. 1845-1848, Nov. 1978.
6. Ch. Lauterbach, D. Romer, J. W. Walter, H. Albrecht, and R. Strzoda, "Advanced integrated planar InP/InGaAs/InP: Fe photoreceiver with selectively ion implanted p and n regions," in Inst. Phys. Conf. Ser., ch. 8, pp. 585-590.
7. M. Sokolich, C. Fields, B. Shi, Y. K. Brown, M. Montes, R. Martinez, S. III. Thomas, and M. Madhav, "A low power 72.8 GHz static frequency divider implemented in AlInAs/InGaAs HBT IC technology," in Proc. GaAs IC Symp., Seattle, WA, 2000, pp. 81-84.
8. F. Eisen, C. Kirkpatrick, and P. Asbeck, "Implantation into GaAs," in GaAs FET Principles and Technology, J. V. DiLorenzo and D. D. Khandelwal, Eds. Norwood, MA: Artech House, pp. 117-144.
9. H. Shen, G. Yang, Z. Zhou, and S. Zou, "Improved activation in Si+ and P+ dually implanted InP," Semicond. Sci. Technol., vol. 4, pp. 951-954, 1989.
10. M. C. Ridgeway, C. Jagadish, T. D. Thompson, and S. T. Johnson, "MeV implantation of the group IV elements in InP," in Proc. IPRM 1992, pp. 56-59.
11. C. H. Fields, M. Sokolich, D. Chow, R. Rajavel, M. Chen, D. Hitko, Y. Royter, and S. Thomas III, "Advanced InP heterojunction bipolar transistors with implanted subcollector," in Proc. GaAs ManTech Conf., 2004, pp. 333-336.