InP heterojunction bipolar transistor with a selectively implanted collector

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1699-1702

  Dong, Yingda ^a   Wei, Yun ^a   Griffith, Zach ^a   Urteaga, Miguel ^a   Dahlström, Mattias ^a   Rodwell, Mark J W ^a  

^a University of California   (United States)

Author keywords

HBT; Implantation; InP; Regrowth

Indexed keywords

CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC CHARGE; HETEROJUNCTIONS; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM PHOSPHIDE;

COLLECTOR IMPLANTS; REGROWTH; SELECTIVE IMPLANTATION;

BIPOLAR TRANSISTORS;

EID: 3142753713     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.042     Document Type: Conference Paper

References (4)

1. Asbeck P.M., Miller D.L., Anderson R.J., Eison F.H. GaAS/AlGaAs heterojunction bipolar transistors with buried oxygen implanted isolation layers. IEEE Electron Dev. Lett. 5:1984;310-312.
2. max transferred-substrate heterojunction bipolar transistor IC technology IEEE Electron Dev. Lett. 19(3):1997;77-79.
3. max . In: IEEE Proceedings of the 14th Indium Phosphide and Related Materials Conference, 2002. p. 47-50.
4. Sokolich M, Chen MY, Chow DH, Royter Y, Thomas III S, Fields CH, et al. InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers. 25th IEEE GaAsIC Symposium, San Diego, CA, USA, November 2003.