InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 10, 2004, Pages 1615-1621

  Sokolich, Marko ^a   Chen, Mary Y ^a   Rajavel, Rajesh D ^a   Chow, David H ^a   Royter, Yakov ^a   Thomas III, Stephen ^a   Fields, Charles H ^a   Shi, Binqiang ^a   Bui, Steven S ^a   Li, James Chingwei ^a   Hitko, Donald A ^a   Elliott, Kenneth R ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

HBT; InP; Ion implantation; Molecular beam epitaxy (MBE)

Indexed keywords

CURRENT DENSITY; DOPING (ADDITIVES); GAIN CONTROL; HETEROJUNCTION BIPOLAR TRANSISTORS; INDUCTIVELY COUPLED PLASMA; ION IMPLANTATION; MOLECULAR BEAM EPITAXY;

INP; SHEET RESISTANCES; TRANSMISSION LINE MEASUREMENT (TLM);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 5444230242     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.833560     Document Type: Conference Paper

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