A new structure and its analytical model for the electric field and breakdown voltage of SOI high voltage device with variable-k dielectric buried layer

Solid-State Electronics

Volumn 51, Issue 3, 2007, Pages 493-499

  Luo, Xiaorong ^a   Zhang, Bo ^a   Li, Zhaoji ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Breakdown voltage; Electric field; Low k dielectric; Modulation; RESURF

Indexed keywords

DIELECTRIC FILMS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; PERMITTIVITY;

DIELECTRIC BURIED LAYER; LOW-K DIELECTRIC; VOLTAGE DEVICE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33947629278     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.01.034     Document Type: Article

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