2D analytical model of SOI double RESURF effect

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 4, 2005, Pages 764-769

  Guo, Yufeng ^a   Fang, Jian ^a   Zhang, Bo ^a   Li, Zehong ^a   Li, Zhaoji ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Breakdown voltage; Double RESURF; Model; SOI

Indexed keywords

ELECTRIC BREAKDOWN; MATHEMATICAL MODELS; POISSON EQUATION;

BREAKDOWN VOLTAGE; DOPING OPTIMAL REGION; DOUBLE RESURF; ELECTRIC FIELD REDUCTION MECHANISM;

SILICON ON INSULATOR TECHNOLOGY;

EID: 20144368790     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

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