Analytical model for the surface field distribution of SOI RESURF devices

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1374-1376

  Chung, Sang Koo ^a   Han, Seung Youp ^a  

^a Ajou University   (South Korea)

Author keywords

High voltage devices; Solid state power

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRIC FIELDS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

REDUCED SURFACE FIELD (RESURF) DEVICES;

MOSFET DEVICES;

EID: 0032098028     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678582     Document Type: Article

References (4)

1. J. A. Appels, M. G. Collet, P. A. H. Hart, H. M. J. Vaes, and J. F. C. M. Verhoeven, Thin layer high-voltage devices (RESURF devices), Philips J. Res., vol. 35, pp. 1-13, 1980.
2. S.-K. Chung, S.-Y. Han, J.-C. Shin, Y.-I. Choi, and S.-B. Kirn, Analytical model for minimum drift region length of SOI RESURF diodes, IEEE Electron Device Lett., vol. 17, pp. 22-24, Jan. 1996.
3. K. K. Young, Short-channel effect in fully depleted SOI MOSFET's, IEEE Trans. Electron Devices, vol. 36, pp. 39902, Feb. 1989.
4. S.-K. Chung, D. C. Yoo, and Y. I. Choi, An analytical method for two-dimensional field distribution of a MOS structure with a finite field plate, IEEE Trans. Electron Devices, vol. 42, pp. 192-194, Jan. 1995.