A new analytical model for optimizing SOI LDMOS with step doped drift region

Microelectronics Journal

Volumn 37, Issue 9, 2006, Pages 861-866

  Guo, Yufeng ^a   Li, Zhaoji ^b   Zhang, Bo ^b  

^a NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

LDMOS; RESURF; SOI; Step drift doping profile

Indexed keywords

ELECTRIC FIELDS; MATHEMATICAL MODELS; OPTIMIZATION; OXIDES; SILICON;

LDMOS; RESURF; SOI; STEP DRIFT DOPING PROFILE;

ELECTRIC BREAKDOWN;

EID: 33745891796     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.03.004     Document Type: Article

References (9)

1. Y. S. Huang, B. J. Baliga, Extension of resurf Principle to dielectrically isolated power devices. in: Proceedings of the International Symposium Power Semiconductor Devices ICs, 1991, pp.27--30.
2. Chung S.K., and Shin D.K. An analytical model for interaction of SIPOS layer with underlying silicon of SOI RESURF devices. IEEE Trans. Electron. Dev. 46 (1999) 804-1807
3. S. Merchant, E. Arnold, H. Baumgart, H. Pein, R. Pinker, Realization of high breakdown voltage (>700V) in thin soi devices, in: Proceedings of the International Symposium on Power Semiconductor Devices ICs, 1991, pp. 31-35.
4. Zhang S.D., Sin J.K.O., Laim T.M.L., and Ping K. Numerical model of linear doping profiles for high-voltage thin-film SOI devices. IEEE Trans. Electron. Dev. 46 5 (1999) 1036-1041
5. Luo J., Cao G., Madathil S.N.E., and Souza M.M.D. A high performance RF LDMOSFET in thin film SOI technology with step drift profile. Solid-State Electron. 47 (2003) 1937-1941
6. Fang-Long C., Ming-Jang L., Gwo-Yann L., Young-Shying C., Liaw C.W., and Huang-Chung C. Modeling and Design of the high performance step SOI-LIGBT power devices by partition mid-point method. Solid-State Electronics 147 (2003) 1693-1698
7. R. Sunkavalli, A. Tamba, B.J. Baliga, Step drift doping profile for high voltage DI lateral power devices, in: Proceedings of the International SOI Conference, 1995, pp.139-140.
8. L. Zhaoji, G. Yufeng, Z. Bo, F. Jian, L. Zehong, A new 2-D analytical model of double RESURF in SOI high voltage devices", in: Proceedings of the International Conference on Solid ICs Technology, 2004, pp. 328-331.
9. Po-Fang H., and Sibuya Y. Basic Theory of Ordinary Differential Equations (1999), Springer, New York