New thin-film power MOSFETs with a buried oxide double step structure

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 377-379

  Duan, Baoxing ^a   Zhang, Bo ^a   Li, Zhaoji ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Breakdown voltage; Buried oxide double step (BODS); Electric field peak; Silicon on insulator (SOI) power MOSFET

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; IMPURITIES; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

BURIED OXIDE DOUBLE STEP; BURIED OXIDE STEP STRUCTURE; ELECTRIC-FIELD PEAK;

MOSFET DEVICES;

EID: 33646234698     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.872904     Document Type: Article

References (7)

1. B. Murari, F. Bertotti, and G. A. Vignola, Smart Power ICs: Technologies and Applications. Berlin, Germany: Springer-Verlag, 1996, pp. 105-171.
2. S. Merchant and E. Aronold et al., "Realization of high breakdown voltage(> 700 V) in thin SOI device," in Proc. 3rd Int. Symp. Power Semicond. Devices ICs, 1991, pp. 31-35.
3. I. J. Kim, S. Matsumoto, T. Sakai, and T. Yachi, "Breakdown voltage improvement for thin-film SOI power MOSFET's by a buried oxide step structure," IEEE Electron Device Lett., vol. 15, no. 5, pp. 148-150, May 1994.
4. B. Duan, B. Zhang, and Z. Li, "A new partial SOI power device structure with p-type buried layer," Solid State Electron., vol. 49, no. 12, pp. 1965-1968, Dec. 2005.
5. TMA MEDICI 4.2. Palo Alto CA: Technology Modeling Associates Inc.
6. R. Stengl and U. Gsele, "Variation of lateral doping - A new concept to avoid high voltage breakdown of planar junctions," in IEDM Tech. Dig., 1985, pp. 154-157.
7. M. Amato and V. Rumennik, "Comparison of lateral and vertical DMOS specific on-resistance," in IEDM Tech. Dig., 1985, pp. 736-739.