Effect of postplasma treatment on characteristics of electron cyclotron resonance chemical vapor deposition SiOF films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 2, 1999, Pages 458-462

  Lee, Seoghyeong ^a   Park, Jong Wan ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001348224     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581606     Document Type: Article

References (9)

1. R. K. Laxman, Semicond. Int. 18, 71 (1995).
2. The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 1997).
3. S. Lee and J.-W. Park, J. Appl. Phys. 80, 5260 (1996).
4. S. Lee, J.-Y. Yoo, and J.-W. Park, Mater. Res. Soc. Symp. Proc. 443, 119 (1997).
5. T. Tamuro, Y. Inoue, M. Satoh, H. Yoshitaka, and J. Sakai, Ext. Abst. on the 1996 International Conference on SSDM, 1996 (unpublished), p. 631.
6. S. Takeishi, H. Kudoh, R. Shinohara, A. Tsukune, Y. Satoh, H. Miyazawa, H. Harada, and M. Yamada, J. Electrochem. Soc. 143, 381 (1996).
7. T. Tamuro, Y. Inoue, M. Satoh, H. Yoshitaka, and J. Sakai, 1995 Dry Process Symposium Proceeding, 1995 (unpublished), p. 275.
8. P. W. Lee, S. Mizuno, A. Verma, H. Tran, and S. V. Nguyen, J. Electrochem. Soc. 143, 2015 (1996).
9. M. Murakami and S. Matsushita, Semicond. Int. 19, 291 (1996).