A new partial SOI power device structure with P-type buried layer

Solid-State Electronics

Volumn 49, Issue 12, 2005, Pages 1965-1968

  Duan, Baoxing ^a   Zhang, Bo ^a   Li, Zhaoji ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Additional electric field modulation; BPSOI; Breakdown voltage; Specific on resistance

Indexed keywords

ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; SEMICONDUCTOR JUNCTIONS; SURFACE PHENOMENA;

ADDITIONAL ELECTRIC FIELD MODULATION; BPSOI; SILICON WINDOW; SPECIFIC ON-RESISTANCE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 28044436736     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.09.012     Document Type: Article

References (8)

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