Silicon-on-nothing MOSFETs: Performance, short-channel effects, and backgate coupling

IEEE Transactions on Electron Devices

Volumn 51, Issue 2, 2004, Pages 240-245

  Pretet, Jérémy ^a,b   Monfray, Stephane ^a   Cristoloveanu, Sorin ^b   Skotnicki, Thomas ^a  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

Author keywords

Doping modulation; Interface coupling; Short channel effects; Silicon on insulator (SOI) MOSFETs; Silicon on nothing (SON) technology

Indexed keywords

GATES (TRANSISTOR); MICROELECTRONIC PROCESSING; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THRESHOLD VOLTAGE;

BACKGATE COUPLING; DOPING MODULATION; INTERFACE COUPLING; SHORT CHANNEL EFFECTS; SILICON ON NOTHING TRANSISTORS;

MOSFET DEVICES;

EID: 0442326807     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.822226     Document Type: Article

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