Novel SOI high voltage device structure with a partial locating charge trench

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue 1, 2006, Pages 115-120

  Luo, Xiaorong ^a   Zhang, Bo ^a   Li, Zhaoji ^a   Tang, Xinwei ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Breakdown voltage; Charge trench; Interface charge; Self heating effect; Vertical electric field

Indexed keywords

ELECTRIC CHARGE; ELECTRIC FIELDS; INTERFACES (MATERIALS); SIMULATORS; STRUCTURES (BUILT OBJECTS); VLSI CIRCUITS;

BREAKDOWN CHARACTERISTICS; CHARGE TRENCH; HIGH VOLTAGE DEVICE STRUCTURE; INTERFACE CHARGE; PARTIAL LOCATING CHARGE TRENCH SOI (PTSOI); SELF-HEATING EFFECT; THERMAL CHARACTERISTICS; VERTICAL ELECTRIC FIELD;

ELECTRIC BREAKDOWN;

EID: 33646135071     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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