Dielectric charge traps: A new structure element for power devices

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 205-208

  Kapels, H ^a   Plikat, R ^a   Silber, D ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRON TRAPS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY;

DIELECTRIC STRUCTURE; HIGH BREAKDOWN VOLTAGE; SILICON DIRECT BONDING; SIMOX;

POWER ELECTRONICS;

EID: 0034447763     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Very high voltage integration in SOI based on a new floating channel technology
2. Leistungshalbleitervorrichtung
3. Comparison of high voltage power rectifier structures
4. Trench MOS Barrier Schottky (TMBS) rectifier
5. A new generation of high voltage MOSFETs breaks the limit line of silicon