Buried air gap structure for improving the breakdown voltage of SOI power MOSFET's

Proceedings - IPEMC 2000: 3rd International Power Electronics and Motion Control Conference

Volumn 3, Issue , 2000, Pages 1061-1063

  Jeon, B C ^a   Kim, D Y ^a   Lee, Y S ^a   Oh, J K ^a   Han, M K ^a   Choi, Y I ^b  

^a Seoul National University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

Breakdown voltage; Buried air gap structure; SOI power MOSFET

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; MOSFET DEVICES; MOTION CONTROL; POWER ELECTRONICS;

AIR GAP STRUCTURES; AIR-GAPS; DRAIN JUNCTIONS; LOW DIELECTRIC CONSTANTS; POWER MOSFET; SUBSTRATE CAPACITANCE; VERTICAL ELECTRIC FIELDS;

POWER CONTROL;

EID: 84951923584     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEMC.2000.882976     Document Type: Conference Paper

References (6)

1. A. Nakagawa et al. IEDM Tech. Digest, pp229- 232, 1992.
2. W. Wonderock, R Meld. E. Siem and J. Korec. Proc. oFISPSD'93, pp 278-281. 1993.
3. I. J Kim. S. Matsumoto, T. Sakai and T. Yachi, IEEE Electron Device Lett., vol 15. pp. 118-150. 1994.
4. R Koh. Extended Abstracts of the 1998 Internationol Conference on Solid Stale Dcvices and Materials, pp 96.1998.
5. M. Jurczak et al, Symp. on VLSI Tech. Digest, pp29-30. 1999.
6. H. Sumida. A. Hirabayashi, JJAP, Vol. 36. pp. 5516-5517, 1997.