Fowler-Nordheim tunnelling and electrically stressed breakdown of 3-mercaptopropyltrimethoxysilane self-assembled monolayers

Nanotechnology

Volumn 16, Issue 12, 2005, Pages 3064-3068

  Aswal, Dinesh K ^a,b   Lenfant, Stephane ^a   Guerin, David ^a   Yakhmi, Jatinder V ^a,b   Vuillaume, Dominique ^a  

^a CNRS   (France)

^b BHABHA ATOMIC RESEARCH CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; GOLD; SELF ASSEMBLY; STATISTICAL METHODS;

CONDUCTION STATES; ENERGY BARRIERS; FIELD-INDUCED EFFECTS; FOWLER-NORDHEIM (FN) ELECTRON TUNNELING;

MONOLAYERS;

EID: 27944484050     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/16/12/056     Document Type: Article

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