Electrical characterization of ordered Si:P dopant arrays

IEEE Transactions on Nanotechnology

Volumn 6, Issue 2, 2007, Pages 213-216

  Pok, Wilson ^a   Reusch, Thilo C G ^a   Scappucci, Giordano ^a   Rucß, Frank J ^a   Hamilton, Alex R ^a   Simmons, Michelle Y ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Microscopy; Nanotechnology; Phosphorus; Planar arrays; Semiconductor device fabrication; Tunneling

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; NANOTECHNOLOGY; PHOSPHORUS; SCANNING TUNNELING MICROSCOPY;

DRAIN ELECTRODES; OHMIC CONDUCTION; PLANAR ARRAYS; SEMICONDUCTOR DEVICE FABRICATION;

DOPING (ADDITIVES);

EID: 33947228384     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.891823     Document Type: Article

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