Coulomb gap, Coulomb blockade, and dynamic activation energy in frustrated single-electron arrays

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 4, 2003, Pages 453211-453216

  Kaplan, Daniel M ^a   Sverdlov, Victor A ^a   Likharev, Konstantin K ^a  

^a STONY BROOK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CALCULATION; ELECTRIC POTENTIAL; ELECTRON; ENERGY; MATHEMATICAL ANALYSIS; MOLECULAR DYNAMICS; QUANTUM THEORY;

EID: 0043263132     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.045321     Document Type: Article

References (32)

1. D.V. Averin and K.K. Likharev, in Mesoscopic Phenomena in Solids, edited by B. Altshuler et aL (Elsevier, Amsterdam, 1991), p. 173.
2. Single Charge Tunneling, edited by H. Grabert and H. Devoret (Plenum, New York, 1992).
3. N.S. Bakhvalov, G.S. Kazacha, K.K. Likharev, and S.I. Serdyukova, Zh. Éksp. Teor. Fiz. 95, 1010 (1989) [Sov. Phys. JETP 68, 581 (1989)].
4. N.S. Bakhvalov, G.S. Kazacha, K.K. Likharev, and S.I. Serdyukova, Zh. Éksp. Teor. Fiz. 95, 1010 (1989) [Sov. Phys. JETP 68, 581 (1989)].
5. P. Delsing, in Single Charge Tunneling (Ref. 2), p. 249.
6. A.N. Korotkov, Phys. Rev. B 50, 17 674 (1994).
7. J.E. Mooij, B.J. van Wees, L.J. Geerligs, M. Peters, R. Fazio, and G. Schön, Phys. Rev. Lett. 65, 645 (1990).
8. N.S. Bakhvalov, G.S. Kazacha, K.K. Likharev, and S.I. Serdyukova, Physica B 173, 319 (1991).
9. J. Mooij and G. Schön, in Single Charge Tunneling (Ref. 2), p. 275.
10. V.A. Sverdlov, D.M. Kaplan, A.N. Korotkov, and K.K. Likharev, Phys. Rev. B 64, 041302 (2001).
11. The background charges may be defined modulo e because of the unavoidable annealing of the system; see below.
12. K.K. Likharev, Proc. IEEE 87, 606 (1999).
13. A.A. Middleton and N.S. Wingreen, Phys. Rev. Lett. 71, 3198 (1993).
14. J.A. Melsen, U. Hanke, H.-O. Müller, and K.A. Chao, Phys. Rev. B 55, 10 638 (1997).
15. A.N. Korotkov (unpublished); see Fig. 13 in Ref. 11.
16. H.-O. Müller, K. Katayama, and H. Mizuta, J. Appl. Phys. 84, 5603 (1998).
17. H.-O. Müller, D.A. Williams, and H. Mizuta, Jpn. J. Appl. Phys., Part 2 39, L723 (2000).
18. J. Johansson and D.B. Haviland, Phys. Rev. B 63, 014201 (2000).
19. V.L. Nguyen, T.D. Nguyen, and H.N. Nguyen, Phys. Lett. A 291, 150 (2001).
20. A.L. Efros and B.I. Shklovskii, J. Phys. C 8, L49 (1975).
21. B.I. Shklovskii and A.L. Efros, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984).
22. W. Chen, H. Ahmed, and K. Nakazato, Appl. Phys. Lett. 66, 3383 (1995).
23. K. Yano et al., Proc. IEEE 87, 633 (1999).
24. A.S. Cordan, Y. Leroy, A. Goltzene, A. Ppin, C. Vieu, M. Mejias, and H. Launois, J. Appl. Phys. 87, 345 (2000).
25. C. Kurdak, A.J. Rimberg, T.R. Ho, and J. Clarke, Phys. Rev. B 57, R6842 (1998).
26. R.P. Andres et al., Science 273, 1690 (1996).
27. C.T. Black, C.B. Murray, R.L. Sandstrom, and S. Sun, Science 290, 1131 (2000).
28. R. Parthasarathy, X.-M. Lin, and H.M. Jaeger, Phys. Rev. Lett. 87, 186807 (2001).
29. M.G. Ancona, W. Kruppa, R.W. Rendell, A.W. Snow, D. Park, and J.B. Boos, Phys. Rev. B 64, 033408 (2001).
30. R. Parthasarathy, X.-M. Lin, K. Elteto, T.F. Rosenbaum, and H. M. Jaeger et al., arXiv preprint cond-mat/0302348 (unpublished).
31. R.H. Chen and K.K. Likharev, Appl. Phys. Lett. 72, 61 (1998).
32. K.A. Matsuoka and K.K. Likharev, Phys. Rev. B 57, 15 613 (1998).