Analytical model for redistribution profile of ion-implanted impurities during solid-phase epitaxy

IEEE Transactions on Electron Devices

Volumn 54, Issue 2, 2007, Pages 262-271

  Suzuki, Kunihiro ^a   Kataoka, Yuji ^a   Nagayama, Susumu ^b   Magee, Charles W ^c   Büyüklimanli, Temel H ^c   Nagayama, Tsutomu ^d  

^a FUJITSU LABORATORIES LTD   (Japan)

^b Nano Science Corp   (Japan)

^c EVANS ANALYTICAL GROUP   (United States)

^d NISSIN ION EQUIPMENT CO LTD   (Japan)

Author keywords

Arsenic; Boron; Ion implantation; Phosphorous; Pileup; Solid phase epitaxy (SPE)

Indexed keywords

AMORPHOUS SEMICONDUCTORS; ARSENIC; BORON; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; PHOSPHORUS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON;

REDISTRIBUTION PROFILE; SOLID-PHASE EPITAXY;

ION IMPLANTATION;

EID: 33847664572     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.888676     Document Type: Article

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