Calibrated model for trapping of implanted dopants at material interface during thermal annealing

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 509-512

  Oh, Yong Seog ^a   Ward, Donald E ^a  

^a SYNOPSYS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; BORON; CMOS INTEGRATED CIRCUITS; INTERFACES (MATERIALS); ION IMPLANTATION; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

IMPLANTED DOPANTS TRAPPING;

SEMICONDUCTOR DEVICE MODELS;

EID: 0032276249     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)