Dopant redistribution effects in preamorphized silicon during low temperature annealing

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 489-492

  Venezia, V C ^a   Duffy, R ^a   Pelaz, L ^b   Aboy, M ^b   Heringa, A ^a   Griffin, P B ^c   Wang, C C ^d   Hopstaken, M J P ^a   Tamminga, Y ^a   Dao, T ^a   Pawlak, B J ^a   Roozeboom, F ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b UNIVERSITY OF VALLADOLID   (Spain)

^c STANFORD UNIVERSITY   (United States)

^d TSMC ^*

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATION; DOPANT SEGREGATION;

AMORPHOUS SILICON; ANNEALING; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; MONTE CARLO METHODS; SECONDARY ION MASS SPECTROMETRY;

CMOS INTEGRATED CIRCUITS;

EID: 17644436255     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. B.J. Pawlak, R. Lindsay, R. Surdeanu, P. Stolk, K. Maex, and X. Pages, "Optimizing p-type ultra-shallow junctions for the 65 nm CMOS technology node," IEEE International Conference on Ion Implantation Technology, New Mexico (2002)
2. J.S. Williams, "Solid phase epitaxial regrowth phenomena in silicon," Nucl. Inst. And Methods 209/210, 219 (1983)
3. + +B," Journal of Applied Physics 50, 183 (1979).
4. H.C.H. Wang, C.C Wang, C.S. Chang, and T. Wang, "Interface induced Uphill diffusion of boron: An effective approach for ultrashallow junctions," IEEE Electron Device Lett. 22, 65 (2001)
5. R. Duffy, V.C. Venezia, A. Heringa, T.W.T. Hüsken, M.J.P. Hopstaken, N.E.B. Cowern, P.B. Griffin, and C.C. Wang, "Boron uphill diffusion during ultra-shallow junction formation" Appl. Phys. Lett. 82 3647 (2003)
6. J.M. Jacques, L.S. Robertson, K.S. Jones, M.E. Law, M. Rendon, and J. Bennett, "Fluorine-enhanced boron diffusion in amorphous silicon," Appl. Phys. Lett. 82, 3469 (2003)
7. M. Jaraiz et al., "Atomistic modeling of point and extended defects in crystalline materials," Mat. Res. Soc. Symp. Proc. 532, 43 (1998)
8. C.S. Rafferty, G.H. Gilmer, M.Jaraiz, D. Eaglesham, and H.-J. Gossman, "Simulation of cluster evaporation and transient enhanced diffusion in silicon," Appl. Phys. Lett. 68, 2395 (1996)
9. C.S. Rafferty, H.H. Vuong, S.A. Eshraghi, M.D. Giles, M.R. Pinto, and S.J. Hillenius, "Explanation of reverse short channel effect by defect gradients," IEDM Tech. Dig. 1993 p 311.
10. M.J. Rendon, P. Zeitzoff, and S. Ravi, "Modeling the as-implanted distribution of antimony and indium," IEEE International Conference on Ion Implantation Technology, Kyoto, 740 (1999).