Boron solubility limits following low temperature solid phase epitaxial regrowth

Materials Research Society Symposium - Proceedings

Volumn 669, Issue , 2001, Pages J851-J856

  Lindfors, C D ^a   Jones, K S ^a   Rendon, M J ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; ION IMPLANTATION; LOW TEMPERATURE EFFECTS; SILICON; SOLUBILITY;

TRANSIENT ENHANCED DIFFUSION (TED);

BORON;

EID: 0035556893     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-669-j8.5     Document Type: Article

References (12)

1. Si front end processing - Physics and technology of dopant-defect interactions II