High activation of Sb during solid-phase epitaxy and deactivation during subsequent thermal process

IEEE Transactions on Electron Devices

Volumn 50, Issue 8, 2003, Pages 1753-1757

  Suzuki, Kunihiro ^a   Tashiro, Hiroko ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Activation; Anneal; Deactivation; Ion implantation; Sb; Solid phase epitaxy

Indexed keywords

ANTIMONY; DOPING (ADDITIVES); ELECTRIC RESISTANCE; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

SOLID PHASE EPITAXY;

VIDEO ON DEMAND;

EID: 0042527450     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815136     Document Type: Article

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