Compact model for amorphous layer thickness formed by ion implantation over wide ion implantation conditions

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1186-1192

  Suzuki, Kunihiro ^a   Kawamura, Kazuo ^a   Kikuchi, Yoshio ^a   Kataoka, Yuji ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Amorphous; As; B; Ge; In; Ion implantation; P; Sb; Si; Solid phase epitaxy (SPE)

Indexed keywords

AMORPHOUS MATERIALS; ARSENIC; CRYSTALS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); PHOSPHORUS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

AMORPHOUS LAYER THICKNESS; SOLID PHASE EPITAXY;

ION IMPLANTATION;

EID: 33646075147     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.872695     Document Type: Article

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