Surprisingly large apparent profile shifts of As and Sb markers in Si bombarded with ultra-low-energy Cs ion beams

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 329-334

  Kataoka, Y ^a   Shigeno, M ^a   Tada, Y ^a   Wittmaack, K ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b INSTITUTE OF EPIDEMIOLOGY   (Germany)

Author keywords

Arsenic; Depth profiling; Depth resolution; Profile shift

Indexed keywords

ARSENIC; CESIUM; EROSION; ERROR ANALYSIS; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; SPUTTERING;

DEPTH RESOLUTION;

SEMICONDUCTING SILICON;

EID: 12244295430     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00670-0     Document Type: Conference Paper

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