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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 3, 2004, Pages 873-876

Anomalous uphill diffusion and dose loss of ultra-low-energy implanted boron in silicon during early stage of annealing

(4) Tsuji, Hiroshi a Furuhashi, Masayuki a Tachi, Masayuki a Taniguchi, Kenji a

a OSAKA UNIVERSITY (Japan)

Author keywords

Boron; Ion implantation; Self interstitial; Shallow junction

Indexed keywords

ANNEALING; BINDING ENERGY; DIFFUSION; DOPING (ADDITIVES); INTERFACES (MATERIALS); ION IMPLANTATION; MOSFET DEVICES; SCHEMATIC DIAGRAMS; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON; SILICON WAFERS; SUPERLATTICES;

SELF-INTERSTITIAL; SHALLOW JUNCTIONS; THERMAL ACTIVATION; TRANSIENT ENHANCED DIFFUSION (TED);

BORON;

EID: 2442439164 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.873 Document Type: Article

Times cited : (6)

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