Characterization of arsenic dose loss at the Si/SiO2 interface using high resolution X-ray photoelectron spectrometry

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 721-724

  Kasnavi, Reza ^a   Pianetta, Piero ^a   Sun, Yun ^a   Mo, Renee ^a   Griffin, Peter B ^a   Plummer, James D ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE-SILICON INTERFACES; TRANSIENT ENHANCED DIFFUSIONS (TED);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032265857     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)