Physical insights on nanoscale multi-gate CMOS design

Solid-State Electronics

Volumn 51, Issue 2, 2007, Pages 188-194

  Fossum, Jerry G ^a  

^a University of Florida   (United States)

Author keywords

Double gate MOSFETs; Gate source drain underlap; Metal gate; Pragmatic FinFETs; Undoped ultra thin body

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); MOSFET DEVICES; NANOTECHNOLOGY; PRODUCT DESIGN;

DRAIN UNDERLAP; GATE SOURCES; METAL GATE; UNDOPED ULTRA-THIN BODY;

CMOS INTEGRATED CIRCUITS;

EID: 33847245907     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.01.020     Document Type: Article

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