메뉴 건너뛰기




Volumn 53, Issue 9, 2006, Pages 2335-2342

The ITFET: A novel FinFET-based hybrid device

Author keywords

FinFET; silicon on insulator (SOI) MOSFET; Static random access memory (SRAM)

Indexed keywords

GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; STATIC RANDOM ACCESS STORAGE;

EID: 33847248263     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.880813     Document Type: Article
Times cited : (44)

References (18)
  • 1
    • 0141940117 scopus 로고    scopus 로고
    • Scaling fully depleted SOI CMOS
    • Oct
    • V. P. Trivedi and J. G. Fossum, "Scaling fully depleted SOI CMOS," IEEE Trans. Electron Devices, vol. 50, no. 10, pp. 2095-2103, Oct. 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.10 , pp. 2095-2103
    • Trivedi, V.P.1    Fossum, J.G.2
  • 2
    • 0035250378 scopus 로고    scopus 로고
    • Double-gate CMOS: Symmetrical-versus asymmetrical-gate devices
    • Feb
    • K. Kim and J. G. Fossum, "Double-gate CMOS: Symmetrical-versus asymmetrical-gate devices," IEEE Trans. Electron Devices, vol. 48, no. 2, pp. 294-299, Feb. 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , Issue.2 , pp. 294-299
    • Kim, K.1    Fossum, J.G.2
  • 4
    • 21044447633 scopus 로고    scopus 로고
    • On the feasibility of nanoscale triple-gate CMOS transistors
    • Jun
    • J.-W. Yang and J. G. Fossum, "On the feasibility of nanoscale triple-gate CMOS transistors," IEEE Trans. Electron Devices, vol. 52, no. 6, pp. 1159-1164, Jun. 2005.
    • (2005) IEEE Trans. Electron Devices , vol.52 , Issue.6 , pp. 1159-1164
    • Yang, J.-W.1    Fossum, J.G.2
  • 5
    • 33947118983 scopus 로고    scopus 로고
    • Int. Tech. Roadmap for Semiconductors, 2005, Austin, TX. Semiconductor Industry Assoc./Internat., SEMATECH.
    • Int. Tech. Roadmap for Semiconductors, 2005, Austin, TX. Semiconductor Industry Assoc./Internat., SEMATECH.
  • 6
    • 33947164574 scopus 로고    scopus 로고
    • Hybrid-FET and its
    • application as SRAM, Feb. 2005. Freescale U.S. Patent Application No. 20060170066
    • L. Mathew and J. G. Fossum, "Hybrid-FET and its application as SRAM," Feb. 2005. Freescale U.S. Patent Application No. 20060170066.
    • Mathew, L.1    Fossum, J.G.2
  • 7
    • 26244452166 scopus 로고    scopus 로고
    • Bulk inversion in FinFETs and implied insights on effective gate width
    • Sep
    • S.-H. Kim, J. G. Fossum, and V. P. Trivedi, "Bulk inversion in FinFETs and implied insights on effective gate width," IEEE Trans. Electron Devices, vol. 52, no. 9, pp. 1993-1997, Sep. 2005.
    • (2005) IEEE Trans. Electron Devices , vol.52 , Issue.9 , pp. 1993-1997
    • Kim, S.-H.1    Fossum, J.G.2    Trivedi, V.P.3
  • 8
    • 33947179221 scopus 로고    scopus 로고
    • L. Mathew, M. Sadd, S. Kalpat, M. Zavala, T. Stephens, R. Mora, S. Bagchi, C. Parker, J. Vasek, D. Sing, R. Shimer, L. Prabhu, G. O. Workman, G. Ablen, Z. Shi, J. Saenz, B. Min, D. Burnett, B.-Y. Nguyen, J. Mogab, M. M. Chowdhury, W. Zhang, and J. G. Fossum, Inverted-T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45 nm and beyond CMOS, in IEDM Tech. Dig., Dec. 2005, pp. 731-734.
    • L. Mathew, M. Sadd, S. Kalpat, M. Zavala, T. Stephens, R. Mora, S. Bagchi, C. Parker, J. Vasek, D. Sing, R. Shimer, L. Prabhu, G. O. Workman, G. Ablen, Z. Shi, J. Saenz, B. Min, D. Burnett, B.-Y. Nguyen, J. Mogab, M. M. Chowdhury, W. Zhang, and J. G. Fossum, "Inverted-T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45 nm and beyond CMOS," in IEDM Tech. Dig., Dec. 2005, pp. 731-734.
  • 10
    • 16244366301 scopus 로고    scopus 로고
    • Synopsis, Inc, Durham, NC
    • Davinci-2003.06 User Guide, Synopsis, Inc., Durham, NC, 2003.
    • (2003) Davinci-2003.06 User Guide
  • 12
    • 12344311284 scopus 로고    scopus 로고
    • Nanoscale FinFETs with gate-source/drain underlap
    • Jan
    • V. P. Trivedi, J. G. Fossum, and M. M. Chowdhury, "Nanoscale FinFETs with gate-source/drain underlap," IEEE Trans. Electron Devices, vol. 52, no. 1, pp. 56-62, Jan. 2005.
    • (2005) IEEE Trans. Electron Devices , vol.52 , Issue.1 , pp. 56-62
    • Trivedi, V.P.1    Fossum, J.G.2    Chowdhury, M.M.3
  • 13
    • 0036475197 scopus 로고    scopus 로고
    • Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs
    • Feb
    • L. Ge and J. G. Fossum, "Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs," IEEE Trans. Electron Devices, vol. 49, no. 2, pp. 287-294, Feb. 2002.
    • (2002) IEEE Trans. Electron Devices , vol.49 , Issue.2 , pp. 287-294
    • Ge, L.1    Fossum, J.G.2
  • 14
    • 0036564015 scopus 로고    scopus 로고
    • Speed superiority of scaled double-gate CMOS
    • May
    • J. G. Fossum, L. Ge, and M.-H. Chiang, "Speed superiority of scaled double-gate CMOS," IEEE Trans. Electron Devices, vol. 49, no. 5, pp. 808-811, May 2002.
    • (2002) IEEE Trans. Electron Devices , vol.49 , Issue.5 , pp. 808-811
    • Fossum, J.G.1    Ge, L.2    Chiang, M.-H.3
  • 16
    • 23844491449 scopus 로고    scopus 로고
    • Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs
    • Aug
    • V. P. Trivedi and J. G. Fossum, "Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs," IEEE Electron Device Lett., vol. 26, no. 8, pp. 579-582, Aug. 2005.
    • (2005) IEEE Electron Device Lett , vol.26 , Issue.8 , pp. 579-582
    • Trivedi, V.P.1    Fossum, J.G.2
  • 17
    • 0023437909 scopus 로고
    • Static-noise margin analysis of MOS SRAM cells
    • Oct
    • E. Seevinck, F. J. List, and J. Lohstroh, "Static-noise margin analysis of MOS SRAM cells," IEEE J. Solid-State Circuits, vol. SSC-22, no. 5, pp. 748-754, Oct. 1987.
    • (1987) IEEE J. Solid-State Circuits , vol.SSC-22 , Issue.5 , pp. 748-754
    • Seevinck, E.1    List, F.J.2    Lohstroh, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.