Surface studies of SiC epitaxial layers grown by chemical vapor deposition

Materials Science and Engineering: B

Volumn 129, Issue 1-3, 2006, Pages 22-30

  Kodigala, Subba Ramaiah ^a   Bhat, I ^a   Chow, T P ^a   Kim, J K ^a   Schubert, E F ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

AFM; C face; CVD; Si face; SiC

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; NANOTECHNOLOGY; OPTICAL MICROSCOPY; OPTIMIZATION; SOLID STATE PHYSICS; SUBSTRATES; SURFACE ROUGHNESS;

C-FACE; LOW ROUGHNESS; SI-FACE; SIC;

SILICON CARBIDE;

EID: 33645860483     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.12.010     Document Type: Article

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