Compositional contrast in Al x Ga 1-x N/GaN heterostructures using scanning spreading resistance microscopy

Applied Surface Science

Volumn 253, Issue 8, 2007, Pages 3937-3944

  Fraser, I S ^a   Oliver, R A ^a   Sumner, J ^a   McAleese, C ^a   Kappers, M J ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Gallium nitride; Scanning spreading resistance microscopy

Indexed keywords

ALUMINUM COMPOUNDS; COMPOSITION; DOPING (ADDITIVES); GALLIUM NITRIDE; SCANNING;

BANDGAP NITRIDES; OPTIMAL IMAGING; SCANNING SPREADING RESISTANCE MICROSCOPY; SILICON-BASED DEVICES;

HETEROJUNCTIONS;

EID: 33846592292     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.08.028     Document Type: Article

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