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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1682-1686

Scanning spreading resistance microscopy current transport studies on doped III-V semiconductors

(6) Lu, R P a Kavanagh, K L b Dixon Warren, St J c Spring Thorpe, A J c Streater, R c Calder, I c

a UNIVERSITY OF CALIFORNIA (United States)

b SIMON FRASER UNIVERSITY (Canada)

c NORTEL NETWORKS (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; THERMIONIC EMISSION;

RESISTANCE MEASUREMENT; SCANNING SPREADING RESISTANCE MICROSCOPY; SCHOTTKY MODEL;

CARRIER CONCENTRATION;

EID: 0035982601 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1496512 Document Type: Conference Paper

Times cited : (34)

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