Analytical model for dc characteristics and small-signal parameters of AlGaN/GaN modulation-doped field-effect transistor for microwave circuit applications

Microwave and Optical Technology Letters

Volumn 27, Issue 6, 2000, Pages 413-419

  Rashmi, ^a   Agrawal, Angu ^b   Sen, S ^a   Haldar, S ^c   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

^c UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; MICROWAVE INTEGRATED CIRCUITS; MODULATION; PIEZOELECTRICITY; POLARIZATION;

MODULATION-DOPED FIELD EFFECT TRANSISTORS (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0034545270     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/1098-2760(20001220)27:6<413::AID-MOP14>3.0.CO;2-S     Document Type: Article

References (17)

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