Two-dimensional C-V model of AlGaAs/GaAs modulation doped field effect transistor (MODFET) for high frequency applications

IEEE Transactions on Electron Devices

Volumn 46, Issue 9, 1999, Pages 1818-1823

  Sen, Sujata ^b   Pandey, Manoj K ^b   Gupta, R S ^a,b  

^a IEEE

^b UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC POTENTIAL; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0032595362     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.784179     Document Type: Article

References (15)

1. C. Morton and J. Wood, "MODFET versus MESFET: The capacitance argument," IEEE Trans. Electron Devices, vol. 41, p. 1447, Aug. 1994.
2. D. Delagebeaudeuf and N. T. Linh, "Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET," IEEE Trans. Electron Devices, vol. ED-29, pp. 955-960, June 1982.
3. K. Lee, M. Shur, T. Drummond, and H. Morkoc, J. Appl. Phys., vol. 54, no. 4, pp. 2093-2096, 1983.
4. J.-W. Chen, M. Thurairaj, and M. B. Das, "Optimization of gate-to-drain separation in submicron gate-length modulation doped FET's for maximum power gain performance," IEEE Trans. Electron Devices, vol. 41, p. 465, Apr. 1994.
5. J. Baek, M. S. Shur, R. R. Daniels, D. K. Arch, J. K. Abrokwah, and O. N. Tufte, "Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field effect transistors," IEEE Trans. Electron Devices, vol. ED-34, p. 1650, Aug. 1987.
6. P. Roblin, H. Rohdin, C. J. Hung, and S. W. Chiu, "Capacitance-voltage analysis and current modeling of pulse doped MODFET's," IEEE Trans. Electron Devices, vol. 36, pp. 2394-2404, Nov. 1989.
7. M. J. Moloney, F. Ponse, and H. Morkoc, "Gate capacitance-voltage characteristics of MODFET's: Its effect on transconductance," IEEE Trans. Electron Devices, vol. ED-32, p. 1675, Sept. 1985.
8. I. C. Kizilyalli, M. Artaki, N. J. Shah, and A. Chandra, "Scaling properties and short channel effects in submicrometer AlGaAs/GaAs MODFET's: A Monte Carlo study," IEEE Trans. Electron Devices, vol. 40, pp. 234-249, Feb. 1993.
9. Y. Awano, M. Kosugi, K. Kosemura, T. Mimura, and M. Abe, "Short channel effects in subquarter-micrometer-gate HEMT's: Simulation and experiment," IEEE Trans. Electron Devices, vol. 36, p. 2260, Oct. 1989.
10. K. Ohmura, H. I. Fujishiro, M. Itoh, H. Nakamura, and S. Nishi, IEEE Trans. Microwave Theory Tech., vol. 39, p. 1995, 1992.
11. C.-S. Chang and H. R. Fetterman, "An analytic model for HEMT's using new velocity field dependence," IEEE Trans. Electron Devices, vol. 34, p. 1456, July 1987.
12. H. Hida, K. Ohata, Y. Suzuki, and H. Toyoshima, "A new low-noise AlGaAs/GaAs 2-DEG FET with a surface undoped layer," IEEE Trans. Electron Devices, vol. ED-33, pp. 601-607, May 1986.
13. S. Tiwari, "Performance of heterostructure FET's in LSI," IEEE Trans. Electron Devices, vol. ED-33, pp. 554-563, May 1986.
14. Hueschen, N. Moll, E. Gowen, and J. Miller, "Pulse doped MODFET's," in IEDM Tech. Dig., 1984, p. 348.
15. K. Wei and A. F. M. Anwar, "A self-consistent calculation of the small signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMT's," Solid State Electron., vol. 37, no. 1, pp. 51-54, 1994.