2-D analytical model for current-voltage characteristics and output conductance of AlGaN/GaN MODFET

Microwave and Optical Technology Letters

Volumn 29, Issue 2, 2001, Pages 117-123

  Rashmi, ^a   Haldar, Subhasis ^a   Gupta, R S ^b  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

AlGaN GaN MODFET; Output conductance; Sheet carrier concentration

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC CURRENT MEASUREMENT; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

MODULATION-DOPED FIELD-EFFECT TRANSISTORS (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0035917945     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.1102     Document Type: Article

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