TEM-nanoindentation studies of semiconducting structures

Micron

Volumn 38, Issue 4, 2007, Pages 377-389

  Le Bourhis, E ^a   Patriarche, G ^b  

^a UNIVERSITÉ DE POITIERS   (France)

^b UNIV PARIS SUD   (France)

Author keywords

Nanoindentation; Phase transition; Plasticity; Semiconducting structure; Transmission electron microscopy

Indexed keywords

INDENTATION; NANOTECHNOLOGY; PHASE TRANSITIONS; PLASTIC DEFORMATION; PLASTICITY; TRANSMISSION ELECTRON MICROSCOPY;

NANOINDENTATION; PLASTIC RELAXATION; SEMICONDUCTING STRUCTURES;

SEMICONDUCTOR DEVICES;

EID: 33846533058     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2006.06.007     Document Type: Article

References (71)

1. 1-xTe. J. Mater. Sci. 23 (1988) 1655-1659
2. Bhattacharya A.K., and Nix W.D. Analysis of elastic and plastic deformation associated with indentation testing of thin films on substrates. Int. J. Solid Struct. 24 (1988) 1287-1298
3. Bradby J.E., Williams J.S., Wong-Leung J., Swain M.V., and Munroe P. Nanoindentation-induced deformation of Ge. Appl. Phys. Lett. 80 (2002) 2651-2653
4. Bundy F.P., and Kasper J.S. A new dense form of solid germanium. Science 139 (1963) 340
5. Chaudhri M.M. Subsurface strain distribution around Vickers hardness indentations in annealed polycrystalline copper. Acta Mater. 46 (1998) 3047-3056
6. Chaudhri, M.M., 2004. Dislocations and indentation. In: Dislocations in Solids. F.R.N. Nabarro Collection (Ed.) (Chapter 70).
7. 3Al(Cr,B) single crystals. Acta Mater. 50 (2002) 2677-2691
8. Choi Y., and Suresh S. Nanoindentation of patterned metal lines on a Si substrate. Scr. Mater. 48 (2003) 249-254
9. Choi Y., Van Vliet K.J., Lu J., and Suresh S. Size effects on the onset of plastic deformation during nanoindentation of thin films and patterned lines. J. Appl. Phys. 94 (2003) 6050-6058
10. Clarke D.R., Kroll M.C., Kirchner P.D., Cook R.F., and Hockey B.J. Amorphization and conductivity of silicon and germanium induced by indentation. Phys. Rev. Lett. 21 (1988) 2156-2159
11. Djemel A., Castaing J., Burle-Durbec N., and Pichaud B. Revue de Physique Appliquée 24 (1989) 779
12. Elmustafa A.A., and Stone D.S. Indentation size effect in polycrystalline F.C.C. metals. Acta Mater. 50 (2003) 3641-3650
13. Field J.S., and Swain M.V. A simple predictive method for spherical indentation. J. Mater. Res. 8 (1993) 297-306
14. Fischer-Cripps A.C. A review of analysis methods for sub-micron indentation testing. Vacuum 58 (2000) 569-585
15. Gao H., Huang Y., Nix W.D., and Hutchinson J.W. Mechanism-based strain gradient plasticity. I: Theory. J. Mech. Phys. Solids 47 (1999) 1239-1263
16. Gerberich W.W., Mook W.M., Perrey C.R., Carter C.B., Baskes M.I., Mukherjee R., Gidwani A., Heberlein J., McMurry P.H., and Girshick S.L. Superhard silicon nanospheres. J. Mech. Phys. Solids 51 (2003) 979-992
17. Gilman J.J. In: Westbrook J.H., and Conrad H. (Eds). The Science of Hardness Testing and its Research Applications (1973), American Society for Metals, Metal Park, OH Chapter 4
18. Gilman J.J. Czech. J. Phys. 45 (1995) 913
19. Gogotsi Y.G., Domnich V., Dub S.N., Kailer A., and Nickel K.G. Cyclic nanoindentation and Raman microspectroscopy study of phase transformations in semiconductors. J. Mater. Res. 15 (2000) 871-879
20. Grillo S.E., Ducarroir M., Nadal M., Tournié E., and Faurie J.P. Nanoindentation study of ZnBeSe heteroepitaxial layers. J. Phys. D Appl. Phys. 35 (2002) pp. 3015-2020
21. xAs. J. Appl. Phys. 60 (1986) 4136-4140
22. Haberl B., Bradby J.E., Swain M.V., Williams J.S., and Munroe P. Phase transformation induced in relaxed amorphous silicon by indentation at room temperature. Appl. Phys. Lett. 85 (2004) 5559-5561
23. Hall, E.O., 1951. The deformation and aging of mild steel. iii. Discussion of results. Proc. Phys. Soc. Lond. B 64, 747-753.
24. Harvey S., Huang H., Venkataraman S., and Gerberich W.W. Microscopy and microindentation mechanics of single crystal Fe-3 wt.% Si. Part I. Atomic force microscopy of a small indentation. J. Mater. Res. 8 (1993) 1291-1299
25. Jamieson J.C. Crystal structures at high pressures of metallic modifications of silicon and germanium. Science 139 (1963) 762
26. Jarayawera N.B., Bushby A.J., Kidd P., Kelly A., and Dustan D.J. Control of plasticity with coherency strain. Philos. Mag. Lett. 79 (1999) 343-349
27. Jarayawera N.B., Downes J.R., Dustan D.J., Bushby A.J., Kidd P., and Kelly A. Coherency strain and a new criterion. Mater. Res. Soc. Symp. Proc. 634 (2001) B4.10
28. Johnson K.L. Contact Mechanics (1985), Cambridge University Press
29. Kasper J.S., and Richards S.H. The crystal structures of new forms of silicon and germanium. Acta Crystallogr. 17 (1964) 752
30. Khayyat M.M., Banini G.K., Hasko D.G., and Chaudhri M.M. Raman microscopy investigations of structural phase transformations in crystalline and amorphous silicon due to indentation with a Vickers diamond at room temperature and 77K. J. Phys. D Appl. Phys. 36 (2003) 1300-1307
31. Kramer D., Huang H., Kriese M., Robach J., Nelson J., Wright A., Bahr D., and Gerberich W.W. Yield strength predictions from the plastic zone around nanocontacts. Acta Mater. 47 (1999) 333-343
32. Largeau L., Patriarche G., and Le Bourhis E. Subsurface deformations induced by a Vickers indenter in GaAs/AlGaAs superlattice. J. Mater. Sci. Lett. 21 (2002) 401-404
33. Largeau L., Patriarche G., Le Bourhis E., Rivière A., and Rivière J.P. Indentation-induced deformation of (0 1 1) GaAs at high temperature. Philos. Mag. 83 (2003) 1653-1673
34. Largeau L., Patriarche G., Glas F., and Le Bourhis E. Determination of the polarity of the asymmetrical in-plane deformation of GaAs (0 0 1). J. Appl. Phys. 95 (2004) 3984-3987
35. Largeau L., Patriarche G., Rivière A., Rivière J.P., and Le Bourhis E. Indentation punching through thin (0 1 1) InP. J. Mater. Sci. 39 (2004) 943-949
36. Lavagne S., Roucau C., Levade C., and Vanderschaeve G. Crystal polarity of sphalerite semiconductors compounds, as determined by convergent-beam electron diffraction experiments on plan-view (0 0 1) samples: applications to ZnSe crystals. Philos. Mag. A 82 (2002) 1451-1462
37. Le Bourhis E., and Patriarche G. TEM observation of low-load indent in GaAs. Philos. Mag. Lett. 79 (1999) 805-812
38. Le Bourhis E., and Patriarche G. Plastic deformation of III-V semiconductors under contact loading. Prog. Cryst. Growth Characteristics Mater. 47 (2003) 1-43
39. Le Bourhis E., Patriarche G., Largeau L., and Rivière J.P. Polarity-induced changes in the nanoindentation response of GaAs. J. Mater. Res. 9 (2004) 131-136
40. Le Bourhis E., and Patriarche G. Solid-solution strengthening in ordered InGaP alloys. Philos. Mag. Lett. 84 (2004) 373-381
41. Le Bourhis E., and Patriarche G. Mechanical response of wall-patterned GaAs surface. Acta Mater. 53 (2005) 1907-1912
42. Lilleodden E.T., Bonin W., Nelson J., Wyrobek J.T., and Gerberich W.W. In-situ imaging of μN load indents into GaAs. J. Mater. Res. 10 (1995) 2162-2165
43. 1-xAs superlattices under bending and nanoindentation. Mater. Res. Soc. Symp. Proc. 778, U2.3.1-U2.3.6.
44. 1-xAs superlattices under nanoindentation and bending. Philos. Mag. 85 (2005) 2469-2490
45. Mammeri F., Le Bourhis E., Rozes L., and Sanchez C. Mechanical properties of hybrid organic-inorganic materials. J. Mater. Chem. 15 (2005) 3787-3811
46. Mencik J., Munz D., Quandt E., Weppelmann E.R., and Swain M.V. Determination of elastic modulus of thin layers using nanoindentation. J. Mater. Res. 12 (1997) 2475-2484
47. Minomura S., and Drickamer H.G. J. Phys. Chem. Solids 23 (1962) 451
48. Minor A.M., Lilleodden E.T., Jin M., Stach E.A., Chrzan D.C., and Morris J.W. Room temperature dislocation plasticity in silicon. Philos. Mag. 85 (2005) 323-330
49. Oliver W.C., and Pharr G.M. An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J. Mater. Res. 7 (1992) 1564-1583
50. Patriarche G., and Le Bourhis E. Nanoindentation of GaAs compliant substructure. Philos. Mag. A 80 (2000) 2899-2911
51. Patriarche G., and Le Bourhis E. Twist-bonded compliant substrate for III-V semiconductors heteroepitaxy. Appl. Surf. Sci. 178 (2001) 134-139
52. Patriarche G., and Le Bourhis E. Non-linear solid solution strengthening in InGaAs alloy. J. Mater. Sci. Lett. 20 (2001) 43-45
53. Patriarche G., Le Bourhis E., Khayyat M.M., and Chaudhri M.M. Indentation-induced crystallization and phase transformation of amorphous germanium. J. Appl. Phys. 96 (2004) 1464-1468
54. Patriarche G., Largeau L., Rivière J.P., and Le Bourhis E. Vickers indentation of thin samples of (0 0 1) GaAs. Philos. Mag. 84 (2004) 3281-3298
55. Patriarche G., Le Bourhis E., Khayyat M.M., and Chaudhri M.M. Transformation de phase dans un film de germanium amorphe induite par nano-indentation. Matériaux et Techniques 93 (2005) 257-262
56. Petch N.J. The cleavage strength of polycrystals. J. Iron Steel Inst. 174 (1953) 25-28
57. Pharr G.M., Oliver W.C., Cook R.F., Kirchner P.D., Kroll M.C., Dinger T.R., and Clarke D.R. Electrical resistance of metallic contacts on silicon and germanium during indentation. J. Mater. Res. 7 (2000) 961-972
58. Rabier J., and George A. Dislocations and plasticity in semiconductors. II. The relation between dislocations dynamics and plastic deformation. Revue de Physique Appliquée 22 (1987) 1327-1351
59. Saka H., Shimatani A., Suganuma M., and Suprijadi. Transmission electron microscopy of amorphization and phase transformation beneath indents in Si. Philos. Mag. A 82 (2002) 1971-1982
60. Sangwal K. Indentation deformation and hardness of crystals at low loads. J. Optoelectron. Adv. Mater. 2 (2000) 105-131
61. xTe bulk crystals. Semiconductors Sci. Technol. 13 (1998) 335-339
62. Tabor D. The Hardness of Metals (1951), Oxford at Clarendon Press, London
63. Tabor D. Indentation hardness: fifty years on. A personal review. Philos. Mag. A 74 (1996) 1207-1212
64. Tafto J., and Spence J.C.H. A simple method for the determination of structure-factor phase relationship and crystal polarity using electron diffraction. J. Appl. Crystallogr. 15 (1982) 60-64
65. Taylor C.R., Stach E.A., Salamo G., and Malshe A.P. Nanoscale dislocation patterning by ultralow load indentation. Appl. Phys. Lett. 87 (2005) 073108-1-073108-3
66. Uchic M.D., Dimiduk D.M., Florando J.N., and Nix W.D. Simple dimensions influence strength and crystal plasticity. Science 305 (2004) 986-989
67. Vanhollebeke K., Moerman I., Van Daele P., and Demeester P. Compliant substrate technology: integration of mismatched materials for opto-electronic applications. Prog. Cryst. Growth Characteristics Mater. 41 (2000) 1-55
68. 1-y/InP system and its effect on microhardness anisotropy characteristics. J. Mater. Sci. 23 (1988) 272-280
69. Williams J.S., Chen Y., Wong-Leung J., Karr A., and Swain M.V. Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters. J. Mater. Res. 14 (1999) 2338-2343
70. Woirgard J., Dargenton J.C., Tromas C., and Audurier V. A new technology for nanohardness measurements: principle and applications. Surf. Coat. Technol. 100-101 (1998) 103-109
71. Yonenaga I., and Suzuki T. Indentation hardnesses of semiconductors and a scaling rule. Philos. Mag. Lett. 82 (2002) 535-542