Coherency strain and a new yield criterion

Materials Research Society Symposium - Proceedings

Volumn 634, Issue , 2001, Pages

  Jayaweera, N B ^a   Downes, J R ^a   Dunstan, D J ^a   Bushby, A J ^a   Kidd, P ^a   Kelly, A ^a  

^a UNIVERSITY OF LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PLASTICITY; PRESSURE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

COHERENCY STRAIN; NANOINDENTATION; POINTWISE CRITERIA; YIELD PRESSURE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0034875177     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Fundamentals of nanoindentation and nanotribology II