Indentation-induced deformations of GaAs(011) at a high temperature

Philosophical Magazine

Volumn 83, Issue 14, 2003, Pages 1653-1673

  Largeau, L ^a   Patriarche, G ^a   Le Bourhis, E ^b   Riviere A ^c   Riviere J P ^c  

^a UNIV PARIS SUD   (France)

^b UNIVERSITÉ DE POITIERS   (France)

^c Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DEFORMATION; DISLOCATIONS (CRYSTALS); HIGH TEMPERATURE EFFECTS; ION BEAMS; TRANSMISSION ELECTRON MICROSCOPY;

CORE RECONSTRUCTIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0242366221     PISSN: 14786435     EISSN: None     Source Type: Journal    
DOI: 10.1080/1478643031000095649     Document Type: Article

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