Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs

IEEE Transactions on Nuclear Science

Volumn 51, Issue 5 III, 2004, Pages 2903-2907

  Boch, J ^a,b   Saigne F ^c   Schrimpf, R D ^d   Fleetwood, D M ^d   Cizmarik, R ^d   Zander, D ^a  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b UNIVERSITÉ CÔTE D'AZUR   (France)

^c UNIVERSITÉ MONTPELLIER II   (France)

^d VANDERBILT UNIVERSITY   (United States)

Author keywords

Dose rate; Elevated temperature irradiation; Integrated circuit (IC); Total dose

Indexed keywords

BIPOLAR TRANSISTORS; DOSIMETRY; HIGH TEMPERATURE EFFECTS; IONIZING RADIATION; IRRADIATION; LINEAR INTEGRATED CIRCUITS;

BIPOLAR JUNCTION TRANSISTORS (BJT); DOSE RATES; ELEVATED TEMPERATURE IRRADIATION (ETI); TOTAL DOSE;

BIPOLAR INTEGRATED CIRCUITS;

EID: 8344251101     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.835055     Document Type: Article

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