Effect of switching from high to low dose rate on linear bipolar technology radiation response

IEEE Transactions on Nuclear Science

Volumn 51, Issue 5 III, 2004, Pages 2896-2902

  Boch, J ^a,b   Saigne F ^c   Schrimpf, R D ^d   Fleetwood, D M ^d   Ducret, S ^c   Dusseau, L ^c   David, J P ^e   Fesquet, J ^c   Gasiot, J ^c   Ecoffet, R ^f  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b UNIVERSITÉ CÔTE D'AZUR   (France)

^c CERN   (Switzerland)

^d Mechanical Engineering Department   (United States)

^e ONERA   (France)

^f CNES   (France)

Author keywords

Bipolar; Device characterization; Dose rate; IC; Switching experiment; Total dose; Transistor

Indexed keywords

BIPOLAR TRANSISTORS; CHARGE CARRIERS; DOSIMETRY; IONIZING RADIATION; MICROELECTRONICS; SWITCHING; X RAYS;

DEVICE CHARACTERIZATION; HIGH DOSE RATES (HDR); SWITCHING EXPERIMENT; TOTAL DOSE;

BIPOLAR INTEGRATED CIRCUITS;

EID: 8344239009     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.835047     Document Type: Article

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