Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2616-2621

  Boch, J ^a,b   Saigne F ^a,b   Schrimpf, R D ^a,c   Vaille J R ^a,b   Dusseau, L ^a,b   Ducret, S ^b   Bernard, M ^b   Lorfevre E ^b,d   Chatry, C ^b,e  

^a IEEE   (France)

^b UNIV MONTPELLIER   (France)

^c VANDERBILT UNIVERSITY   (United States)

^d CNES   (France)

^e TRAD   (France)

Author keywords

Bipolar technology; Dose rate; Enhanced low dose rate sensitivity (ELDRS); Integrated circuit; Switching experiment; Total dose

Indexed keywords

BIPOLAR TECHNOLOGY; DOSE RATE; ENHANCED LOW-DOSE-RATE SENSITIVITY (ELDRS); SWITCHING EXPERIMENT; TOTAL DOSE;

DEGRADATION; DOSIMETRY; FORECASTING; IRRADIATION; PARAMETER ESTIMATION; SWITCHING;

BIPOLAR INTEGRATED CIRCUITS;

EID: 33144461714     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860711     Document Type: Conference Paper

References (8)

1. A. R. Hart, J. B. Smyth Jr., V. A. J. van Lint, D. P. Snowden, and R. E. Leadon, "Hardness assurance considerations for long term ionizing radiation effects on bipolar structures," IEEE Trans. Nucl. Sci., vol. NS-25, no. 6, pp. 1502-1507, Dec. 1978.
2. E. W. Enlow, R. L. Pease, W. E. Combs, R. D. Schrimpf, and R. N. Nowlin, "Response of advanced bipolar processes to ionizing radiation," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1342-1351, Dec. 1991.
3. J. Boch, F. Saigné, R. D. Schrimpf, D. M. Fleetwood, S. Ducret, L. Dusseau, J. P. David, J. Fesquet, J. Gasiot, and R. Ecoffet, "Effect of switching from high to low dose rate on linear bipolar technology radiation response," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 2896-2902, Oct. 2004.
4. H. J. Barnaby, R. D. Schrimpf, R. L. Pease, P. Cole, T. Turflinger, J. Krieg, J. Titus, D. Emily, M. Gehlhausen, S. C. Witczak, M. C. Maher, and D. van Nort, "Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response, " IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1666-1673, Dec. 1999.
5. H. J. Barnaby, C. Cirba, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, M. R. Shaneyfelt, T. Turflinger, J. Krieg, and M. C. Maher, "Origins of total dose response variability in linear bipolar microcircuits," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2342-2349, Dec. 2000.
6. J. Boch, F. Saigné, S. Ducret, R. D. Schrimpf, D. M. Fleetwood, P. Iacconi, and L. Dusseau, "Total dose effect on bipolar ICs: Characterization of the saturation region," IEEE Trans. Nucl.Sci., vol. 51, no. 6, pp. 3225-3230, Dec. 2004.
7. S. Ducret, F. Saigné, J. Boch, R. D. Schrimpf, D. M. Fleetwood, J. R. Vaillé, L. Dusseau, J. P. David, and R. Ecoffet, "Effect of a thermal annealing on the radiation induced degradation on bipolar technologies when the dose rate is switched from high to low," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3219-3224, Dec. 2004.
8. A. H. Johnston, B. G. Rax, and C. I. Lee, "Enhanced damage in linear bipolar integrated circuits at low dose rate," IEEE Trans. Nucl. Sci., vol. 42, no. 6, pp. 1650-1659, Dec. 1995.