Characteristics of high in-content InGaN alloys grown by MOCVD

Chinese Physics Letters

Volumn 23, Issue 12, 2006, Pages 3369-3372

  Zhu, Xue Liang ^a   Guo, Li Wei ^a   Yu, Nai Sen ^a   Peng, Ming Zeng ^a   Yan, Jian Feng ^a   Ge, Bing Hui ^a   Jia, Hai Qiang ^a   Chen, Hong ^a   Zhou, Jun Ming ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INDIUM ALLOYS; SAPPHIRE; SEMICONDUCTOR ALLOYS; SINGLE CRYSTALS; X RAY DIFFRACTION;

GAN BUFFER; HEXAGONAL STRUCTURES; HIGH MOBILITY; HIGH RESOLUTION XRAY DIFFRACTION (XRD); HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INGAN ALLOY; INN FILMS; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; PHOTOLUMINESCENCE MEASUREMENTS; ROOM-TEMPERATURE PHOTOLUMINESCENCE;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 33846128413     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/12/069     Document Type: Article

References (21)

1. Wu J et al 2002 Appl. Phys. Lett. 80 3967
2. Matsuoka T, Okamoto H, Nakao M, Harima H and Kurimoto E 2002 Appl. Phys. Lett. 81 1246
3. Tansley T L and Foley C P 1986 J. Appl. Phys. 59 3241
4. http://www.compoundsemiconductor.net/articles/news/6/11/17/1
5. Mohammad S N and Morkoc H 1996 Prog. Quantum Electron. 20 361
6. Chin V W L, Tansley T L and Osotchan T 1994 J. Appl. Phys. 75 7365
7. Okamoto N et al 2004 J. Crystal Growth 272 278
8. Naoi H et al 2005 Phys. Status Solidi A 202 2642
9. Hernández S et al 2005 J. Appl. Phys. 98 013511
10. Qin Q, Guo LW, Zhou Z T et al 2005 Chin. Phys. Lett. 22 2298
11. Li D S et al 2004 Chin. Phys. Lett. 21 970
12. Yu K M et al 2005 Appl. Phys. Lett. 86 071910
13. Ayers J E 1994 J. Crystal Growth 135 71
14. Hai Lu et al 2000 Appl. Phys. Lett. 77 2548
15. Zheng X H et al 2003 J. Crystal Growth 250 345
16. Bhuiyan A G, Hashimoto A and Yamamoto A 2003 J. Appl. Phys. 94 2779
17. Davydov V Y et al 2002 Phys. Status Solidi B 229 R1
18. Wu J et al 2002 Phys. Rev. B 66 R201403
19. Fareed RSQ et al 2004 Appl. Phys. Lett. 84 1892
20. Wu J et al 2004 Appl. Phys. Lett. 84 2805
21. Pan Y B et al 2004 Chin. Phys. Lett. 21 2016