Structural and luminescence properties of In-rich InGaN layers grown on InN templates by RF-MBE

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 14, 2005, Pages 2642-2647

  Naoi, H ^a   Kurouchi, M ^a   Takado, S ^a   Muto, D ^a   Araki, T ^a   Nanishi, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; LINE WIDTH; LUMINESCENCE PROPERTIES;

CRYSTALLINE MATERIALS; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; THIN FILMS;

INDIUM COMPOUNDS;

EID: 28644449777     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200562006     Document Type: Article

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