Method for measurement of lattice parameter of cubic GaN layers on GaAs (0 0 1)

Journal of Crystal Growth

Volumn 250, Issue 3-4, 2003, Pages 345-348

  Zheng, X H ^a   Wang, Y T ^a   Feng, Z H ^a   Yang, H ^a   Chen, H ^b   Zhou, J M ^b   Liang, J W ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

A1. In plane strain; A1. Lattice parameters; A1. Triple axis diffraction; B1. c GaN

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; LATTICE CONSTANTS; TENSILE STRESS; THERMAL EXPANSION;

TRIPLE-AXIS DIFFRACTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037400035     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02465-X     Document Type: Conference Paper

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