Growth of a-plane GaN films on r-plane sapphire substrates by metalorganic chemical vapour deposition

Chinese Physics Letters

Volumn 21, Issue 5, 2004, Pages 970-971

  Li, Dong Sheng ^a   Chen, Hong ^a   Yu, Hong Bo ^a   Zheng, Xin He ^a   Huang, Qi ^a   Zhou, Jun Ming ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; III-V SEMICONDUCTORS; SAPPHIRE;

A-PLANE; ATOMIC-FORCE-MICROSCOPY; CONDITION; GAN FILM; GROWTH PRESSURE; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; NON-POLAR; PIT DENSITY; PLANE SAPPHIRE; SAPPHIRE SUBSTRATES;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 2442548580     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/5/058     Document Type: Article

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