SCOPUS 정보 검색 플랫폼

Chemical Vapor Deposition

Volumn 12, Issue 8-9, 2006, Pages 465-473

Development of multiwafer warm-wall planetary VPE reactors for SiC device production

(1) Burk, Albert A a

a Arkansas Power Electronics International Inc (United States)

Author keywords

100 mm wafers; Planetary reactors; SiC epitaxy; Warm wall reactors

Indexed keywords

DOPING (ADDITIVES); PROCESS CONTROL; SEMICONDUCTING SILICON; SILICON WAFERS;

100 MM WAFERS; PLANETARY REACTORS; SIC EPITAXY; WARM-WALL REACTORS;

VAPOR PHASE EPITAXY;

EID: 33845591610 PISSN: 09481907 EISSN: 15213862 Source Type: Journal
DOI: 10.1002/cvde.200500028 Document Type: Article

Times cited : (21)

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