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Volumn 527-529, Issue PART 1, 2006, Pages 159-162

SiC warm-wall planetary VPE growth on multiple 100-mm diameter wafers

Author keywords

100 mm wafers; Epitaxy; Planetary; Warm wall

Indexed keywords

DOPING (ADDITIVES); EPITAXIAL LAYERS; OPTIMIZATION; SILICON CARBIDE; SILICON WAFERS;

EID: 33845585416     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.159     Document Type: Conference Paper
Times cited : (8)

References (10)
  • 3
    • 0032660207 scopus 로고    scopus 로고
    • A. A. Burk, Jr., M. J. O'Loughlin, and H. D. Nordby, Jr.: J. Crystal Growth, 200 (1999), p. 458.
    • A. A. Burk, Jr., M. J. O'Loughlin, and H. D. Nordby, Jr.: J. Crystal Growth, Vol. 200 (1999), p. 458.
  • 6
    • 85086679833 scopus 로고    scopus 로고
    • Silicon Carbide and Related Materials 2004
    • Vols
    • B. Thomas and C. Hecht: Silicon Carbide and Related Materials 2004, Materials Science Forum Vols. 483-485 (2005) p. 141.
    • (2005) Materials Science Forum , vol.483-485 , pp. 141
    • Thomas, B.1    Hecht, C.2
  • 7
    • 37849001525 scopus 로고    scopus 로고
    • Fei Yan and W. J. Choyke, University of Pittsburgh, Pittburgh, PA
    • Fei Yan and W. J. Choyke, University of Pittsburgh, Pittburgh, PA.
  • 10
    • 33750283482 scopus 로고    scopus 로고
    • J. J. Sumakeris, M. K. Das, S. Ha, E.Hurt, K. Irvine, M. J. Paisley, M. J. O'Loughlin, J. W. Palmour, M. Skowronski, H. McD. Hobgood, and C. H. Carter, Jr.: Silicon Carbide and Related Materials 2004, Materials Science Forum Vols. 483-485 (2005) p. 155.
    • J. J. Sumakeris, M. K. Das, S. Ha, E.Hurt, K. Irvine, M. J. Paisley, M. J. O'Loughlin, J. W. Palmour, M. Skowronski, H. McD. Hobgood, and C. H. Carter, Jr.: Silicon Carbide and Related Materials 2004, Materials Science Forum Vols. 483-485 (2005) p. 155.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.