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Volumn 527-529, Issue PART 1, 2006, Pages 159-162
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SiC warm-wall planetary VPE growth on multiple 100-mm diameter wafers
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Author keywords
100 mm wafers; Epitaxy; Planetary; Warm wall
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Indexed keywords
DOPING (ADDITIVES);
EPITAXIAL LAYERS;
OPTIMIZATION;
SILICON CARBIDE;
SILICON WAFERS;
100-MM WAFERS;
EPITAXIAL LAYER GROWTH;
PLANETARY;
WARM-WALL;
EPITAXIAL GROWTH;
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EID: 33845585416
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-425-1.159 Document Type: Conference Paper |
Times cited : (8)
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References (10)
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