4H-SiC MESFET's with 42 GHz fmax

IEEE Electron Device Letters

Volumn 17, Issue 7, 1996, Pages 369-371

  Sriram, S ^b   Augustine, G ^b   Burk Jr , A A ^a,b   Glass, R C ^c,d   Hobgood, H M ^b   Orphanos, P A ^c,e   Rowland, L B ^b   Smith, T J ^a,b   Brandt, C D ^b   Driver, M C ^a,c,f   Hopkins, R H ^b  

^a IEEE

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c Westinghouse Sci and Technol Ctr ^*

^d Arkansas Power Electronics International Inc   (United States)

^e ABB Daimler Benz Transportation   (United States)

^f II VI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; GAIN MEASUREMENT; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES; VOLTAGE MEASUREMENT;

DRAIN BREAKDOWN VOLTAGE; DRAIN CURRENT; MESFET STRUCTURES; SILICON CARBIDE MESFETS;

MESFET DEVICES;

EID: 0030182811     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.506370     Document Type: Article

References (5)

1. S. Sriram, R. C. Clarke, A. A. Burk, Jr., H. M. Hobgood, P. G. McMullin, P. A. Orphanson, R. R. Siergiej, T. J. Smith, C. D. Brandt, M. C. Driver, and R. H. Hopkins, "RF performance ofSiC MESFET's on high resistivity substrates," IEEE Electron Device Lett., vol. 15, no. 11, pp. 458-459, 1994.
2. S. Sriram, R. R. Barron, A. W. Morse, T. J. Smith, G. Augine, A. A. Burk, Jr., R. C. Clarke, R. C. Glass, H. M. Hobogood, P. A. Orphanos, R. R. Siergiej, C. D. Brandt, M. C. Drivet, and R. H. Hopkins. "High efficiency operation of 6H-SiC MESFET's at 6 GHZ," in 53rd Dev. Res. Conf., Charlottesville, VA. 1995.
3. C. E. Weitzel, J. W. Palmour, C. H. Carter, and K. J. Nordquist, "4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz," IEEE Electron Device Lett., vol. 15, no. 10, pp. 406-408, 1994.
4. max," in 53rd Dev. Res. Conf., Charlottesville, VA. 1995.
5. H. M. Hobgood, D. L. Barrett, J. P. McHugh, R. C. Clarke, S. Sriram, A. A. Burk, Jr., J. Greggi, C. D. Brandt, R. H. Hopkins, and W. J. Choyke, "Large Diameter 6H-SiC for microwave device applications," J. Cryst. Growth, vol. 137, pp. 181-186, 1994.