Development of epitaxial SiC processes suitable for bipolar power devices

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 155-158

  Sumakeris, Joseph J ^a   Das, Mrinal K ^a   Ha, Seoyong ^b   Hurt, Edward ^a   Irvine, Kenneth ^a   Paisley, Michael J ^a   O'Loughlin, Michael J ^a   Palmour, John W ^a   Skowronski, Marek ^b   Hobgood, H McD ^a   Carter Jr , Calvin H ^a  

^a Arkansas Power Electronics International Inc   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Defect density; Epilayer uniformity; SiC epitaxy

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; DEFECT DENSITY; EPITAXIAL GROWTH; SILICON CARBIDE;

EPILAYER UNIFORMITY; EPITAXIAL TECHNOLOGY; VF DRIFT;

EPILAYERS;

EID: 33750283482     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.155     Document Type: Conference Paper

References (9)

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