Large area SiC epitaxial layer growth in a warm-wall planetary VPE reactor

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 137-140

  Burk, A A ^a   O'Loughlin, M J ^a   Paisley, M J ^a   Powell, A R ^a   Brady, M F ^a   Leonard, R T ^a   Muller St G ^a   Allen, S T ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Planetary; SiC epitaxy; Warm wall

Indexed keywords

CONCENTRATION (PROCESS); MESFET DEVICES; SILICON CARBIDE; VAPOR PHASE EPITAXY;

ABRUPT DOPING TRANSITIONS; EPITAXIAL LAYER GROWTH; INTRAWAFER LAYER THICKNESS; VPE REACTORS;

EPITAXIAL LAYERS;

EID: 35148865750     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.137     Document Type: Conference Paper

References (14)

1. H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys., 76, 1363 (1994).
2. J. W. Milligan, S.T. Allen, J. J. Sumakeris, A. R. Powell, J. R. Jenny, and J. W. Palmour, GaAs MANTECH Conference Digest of Papers, Scottsdale, Az. (2003).
3. R. R. Siergiej, S. Sriram, R. C. Clarke, A. K. Agarwal, C. D. Brandt, A. A. Burk, Jr., T. J. Smith, A. Morse, and P. A. Orphanos, Tech. Digest Int. Conf. SiC and Rel. Mat'95, (Kyoto, Japan 1995), p. 321.
4. A. Agarwal, Sci-Hyung Ryu, C. Capell, J. Richmond, J. Palmour, H. Bartlow, P. Chow, S. Scozzie, W. Tipton, S. Baynes and K. Jones, Silicon Carbide and Related Materials 2003, Materials Science Forum Vols. 457-460 (2004) p. 1141.
5. Cree, Inc. 4600 Silicon Drive, Durham NC, 27703.
6. M.Treu, R. Rupp, H. Brunner, F. Dahlquist and Ch. Hecht, Silicon Carbide and Related Materials 2003, Materials Science Forum Vols. 457-460 (2004) p. 981.
7. P. M. Frijlink, J. Crystal Growth, 93, 207 (1988).
8. P. M. Frijlink, J. L. Nicolas and P. Suchet, J. Crystal Growth, 107, 166 (1991).
9. Aixtron Inc. Kackerstr. 15-17, D-52072 Aachen, Germany.
10. R. Rupp, A. Wiedenhofer, D. Stephani, Mat. Sci. and Engineering, B61-62 (1999), p.125.
11. A. A. Burk, Jr., M. J. O'Loughlin, and H. D. Nordby, Jr., J. Crystal Growth, Vol. 200 (1999), p. 458.
12. M. J. O'Loughlin, H. D. Nordby, Jr., and A. A. Burk, Jr., Mat. Res. Soc. Symp. Proc. Vol 572 (1999), p.161.
13. B. Thomas, W. Bartsch, R. Stein, R. Schörner and D. Stephani, Silicon Carbide and Related Materials 2003, Materials Science Forum Vols. 457-460 (2004) p. 181.
14. T. Kimoto, A. Itoh, H. Akita, T. Urushidani, S. Jang, and H. Matsunami, Compound Semiconductors (1994), p. 437.